0755-83897562
-
STGW50HF60S -
STGW50HF60S
- 品牌ST Micro
- 封装TO-247-3
- 批号2018+
- 数量电询
- 说明IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 600V 110A
- DescriptionTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247 Tube
- DataSheethttp://www.st.com/web/en/resource/technical/document/datasheet/CD00262158.pdf
- DataSheet
STGW50HF60S,绝缘栅双极型晶体管单管,品牌:ST Micro,封装:TO-247-3,参数:配置:Single; 通道类型:N; 最大集电极发射极电压:600 V; 最大连续集电极电流:110 A; 最大栅极发射极电压:±20 V; 安装方式:Through Hole. 询报价及购买请致电:0755-83897562
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 110 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
- 上一条STGF10NC60SD
- 下一条STGFW20H65FB
相似型号
-
STGF10NC60SD
IGBT管,绝缘栅双极型晶体管单管,参数:Trans IGBT Chip N-CH 600V 10A -
IRG7T150HF12J
IGBT模块,绝缘栅双极型晶︼体管模块,参数:Trans IGBT Module N-CH 1200V 300A -
FP7G75US60
IGBT模块,绝缘栅双极型晶体管模◢块,参数:Trans IGBT Module N-CH 600V 75A -
CPV364M4F
IGBT模块,绝缘栅双极型晶▓体管模块,参数:Trans IGBT Module N-CH 600V 27A -
CPV363M4K
IGBT模块,绝缘栅双极型晶体管◥模块,参数:Trans IGBT Module N-CH 600V 11A -
BSM600GA120DLCS,C-SERIE
IGBT模块,绝缘栅∮双极型晶体管模块,参数:Trans IGBT Module N-CH 1.2KV 900A -
BSM400GA170DL C#
IGBT模块,绝缘栅双极型晶体管模ㄨ块,参数:Trans IGBT Module N-CH 1.7KV 800A -
BSM300GA170DLS
IGBT模块,绝缘栅双极型晶体管模块,参数:Trans IGBT Module N-CH 1.7KV 600A -
BSM200GB170DL,C-SERIE
IGBT模块,绝缘栅双极型晶体管模块,参数:Trans IGBT Module N-CH 1.7KV 400A -
BSM100GB170DL,C-SERIE
IGBT模块,绝缘栅双极型晶体管模块,参数:Trans IGBT Module N-CH 1.7KV 200A